Semiconductor bandgap and carriers calculator

Calculate bandgap, equilibrium carriers, Fermi level and conductivity for Si, Ge and GaAs.

Silicon: 300 K; Bandgap Eg = 1.125 eV

Bandgap Eg1.125 eV
Intrinsic carriers ni8.143e+9 cm-3
Electrons n8.143e+9 cm-3
Holes p8.143e+9 cm-3
Fermi level above valence edge0.5567 eV
Conductivity (fixed 300 K mobilities)2.414e-6 S/cm
10020030040050060000.290.580.871.2Temperature (K)Eg (eV)
Bandgap vs temperature
1002003004005006002.1e-117.2e-52508.6e+83.0e+15Temperature (K)ni (cm-3)
Intrinsic carriers vs temperature
K
cm-3
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At 300 K, silicon has a bandgap of about 1.125 eV. Choose Si, Ge or GaAs to calculate temperature-dependent bandgap and intrinsic carriers, then add signed net doping to estimate the Fermi level and conductivity.

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Connector tool: semiconductor_carriers

Example: What are the bandgap and intrinsic carriers of silicon at 300 K?

About the connector

Eg(T) = Eg(0) – alpha T^2/(T + beta); ni = sqrt(Nc Nv) exp[-Eg/(2 kB T)]. Charge neutrality: n – p = ND – NA; np = ni^2. EF – Ev = kB T ln(Nv/p); conductivity = q(n mu_n + p mu_p).

Intrinsic material reference at 300 K

MaterialBandgap Eg (eV)Intrinsic carriers ni (cm-3)Electron mobility at 300 K (cm2/V/s)Hole mobility at 300 K (cm2/V/s)
Silicon1.1258.143e+91400450
Germanium0.66342.033e+1339001900
Gallium arsenide1.4222.044e+68800400

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ScienceShot. Semiconductor bandgap and carriers calculator. https://scienceshot.com/semiconductor-bandgap-calculator.

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ScienceShot. (2026). Semiconductor bandgap and carriers calculator [Online calculator]. https://scienceshot.com/semiconductor-bandgap-calculator

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  author = {{ScienceShot}},
  title  = {{Semiconductor bandgap and carriers calculator}},
  year   = {2026},
  note   = {Online calculator},
  url    = {https://scienceshot.com/semiconductor-bandgap-calculator}
}

Sources: C. D. Thurmond, The standard thermodynamic functions for the formation of electrons and holes in Ge, Si, GaAs, and GaP, Journal of the Electrochemical Society 122, 1133 (1975); B. Van Zeghbroeck, Principles of Semiconductor Devices (2011), Appendix 3: Material Parameters (300 K); CODATA 2018, NIST.

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