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Qubit performance ledger
The best reported two-qubit gate fidelity in the ledger is 99.9916%, on trapped ions. Best value per platform, with date and source: trapped ions 99.9916% (Oxford Ionics (an IonQ company), October 2025, preprint); superconducting qubits 99.94% (University of Maryland, College Park; University of Wisconsin–Madison, July 2024, preprint); defect spins (NV and similar) 99.93% (QuTech, Delft University of Technology, March 2025, peer-reviewed); neutral atoms 99.854% (Harvard University, April 2026, preprint); spin qubits in semiconductors 99.81% (Princeton University, November 2021, preprint).
Finding SSF-001, 9 November 2026
Two-qubit gate error records, 2016 to 2026
Superconducting qubits went from 9 × 10−3 in 2016 to 6 × 10−4 in 2024. The best result of each year has halved about every 1.7 years, and there has been no new record for over two years. At that pace the error reaches 1 × 10−4 around 2030.
Trapped ions hold the lowest measured error, 8.4 × 10−5 (October 2025), about 10 times below the 2016 level.
Neutral atoms went from 5 × 10−3 in 2023 to 1.5 × 10−3 (April 2026).
Silicon spin qubits have stood at about 99.8% (error 1.9 × 10−3) since November 2021, five years without a new record.
Best two-qubit gate error over time
Each line follows the lowest error per two-qubit gate (1 minus fidelity, log scale) reported so far on a platform. Dots are individual results: filled for peer-reviewed, open for preprint, diamonds for vendor.
Error per two-qubit gate (1 minus fidelity)
All results
Filter by platform, metric, statistic, source type and year. Every row links to the place in the source where the number was read.
Showing 357 of 357 results
| Platform | Device and group | Metric | Value | Statistic | Source | Date |
|---|---|---|---|---|---|---|
| Trapped ion | Quantinuum System Model H1Quantinuum | Single-qubit gate fidelityUndated page | 99.998% | Best | Vendor Quantinuum, Quantinuum System Model H1 product page (undated)Where: H1 page headline: "99.998% single-qubit gate fidelity" | |
| Trapped ion | Quantinuum System Model H1Quantinuum | Two-qubit gate fidelityUndated page | ≥ 99.9% | Best | Vendor Quantinuum, Quantinuum System Model H1 product page (undated)Where: H1 page headline: ">99.9% two-qubit gate fidelity" | |
| Trapped ion | Quantinuum System Model H2Quantinuum | Single-qubit gate fidelityUndated page | ≥ 99.99% | Best | Vendor Quantinuum, Quantinuum System Model H2 product page (undated)Where: H2 page headline: ">99.99% single-qubit gate fidelity" | |
| Trapped ion | Quantinuum System Model H2Quantinuum | Two-qubit gate fidelityUndated page | ≥ 99.9% | Best | Vendor Quantinuum, Quantinuum System Model H2 product page (undated)Where: H2 page headline: ">99.9% two-qubit gate fidelity" | |
| Trapped ion | Quantinuum HeliosQuantinuum | Single-qubit gate fidelityUndated page | 99.9975% | Best | Vendor Quantinuum, Quantinuum Helios product page (undated)Where: Helios page headline: "99.9975% single-qubit gate fidelity" | |
| Trapped ion | Quantinuum HeliosQuantinuum | Two-qubit gate fidelityUndated page | 99.921% | Best | Vendor Quantinuum, Quantinuum Helios product page (undated)Where: Helios page headline: "99.921% two-qubit gate fidelity" | |
| Neutral atom | Infleqtion Sqale (available now)Infleqtion | Two-qubit gate fidelityPost-selectedUndated page | 99.48% | Best | Vendor Infleqtion, Sqale specifications (product page, undated)Where: Sqale Specifications table, "Available now" column | |
| Neutral atom | Infleqtion Sqale (available now)Infleqtion | Two-qubit gate fidelityUndated page | 98.8% | Single device | Vendor Infleqtion, Sqale specifications (product page, undated)Where: Sqale Specifications table, "Available now" column | |
| Neutral atom | Infleqtion Sqale (available now)Infleqtion | Single-qubit gate fidelityUndated page | 99.98% | Single device | Vendor Infleqtion, Sqale specifications (product page, undated)Where: Sqale Specifications table, "Available now" column | |
| Neutral atom | Infleqtion Sqale (available now)Infleqtion | Single-qubit gate fidelityUndated page | 99.9% | Single device | Vendor Infleqtion, Sqale specifications (product page, undated)Where: Sqale Specifications table, "Available now" column | |
| Neutral atom | cryogenic 133Cs atom arrayPrinceton University | Two-qubit gate fidelity | 99.76% ±0.08 | Single device | Preprint Jin et al., arXiv:2610.40329Where: abstract (arXiv abstract page) | |
| Defect spin | single NV in isotopically engineered diamondQuTech, Delft University of Technology / QST | T2 dynamical decoupling | 11.2 s ±0.8 | Single device | Peer-reviewed Ten-second electron-spin coherence in isotopically engineered diamond, npj Quantum…Where: abstract (text as indexed in the OpenAlex record W7153272921) | |
| Defect spin | single NV in isotopically engineered diamondQuTech, Delft University of Technology / QST | T2 echo | 6.8 ms ±0.1 | Single device | Peer-reviewed Ten-second electron-spin coherence in isotopically engineered diamond, npj Quantum…Where: abstract (text as indexed in the OpenAlex record W7153272921) | |
| Trapped ion | UMass/UCSB integrated SiN laser experimentUMass Amherst, UC Santa Barbara | Single-qubit gate fidelity | 99.61% ±0.03 | Mean | Preprint Caron et al., Trapped Ion Qubit Gates and Entanglement Driven by an Integrated Phot…Where: Abstract | |
| Trapped ion | UMass/UCSB integrated SiN laser experimentUMass Amherst, UC Santa Barbara | T2 echo | 1.75 ms ±0.033 | Single device | Preprint Caron et al., Trapped Ion Qubit Gates and Entanglement Driven by an Integrated Phot…Where: Abstract | |
| Trapped ion | UMass/UCSB integrated SiN laser experimentUMass Amherst, UC Santa Barbara | T2 Ramsey | 659 µs ±9 | Single device | Preprint Caron et al., Trapped Ion Qubit Gates and Entanglement Driven by an Integrated Phot…Where: Abstract | |
| Defect spin | VB- in isotopically enriched h10B15NThe University of Tokyo / NIMS | T2 echo | 0.1087 µs ±0.0055 | Single device | Peer-reviewed Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride…Where: abstract (text as indexed in the OpenAlex record W7159606453) | |
| Defect spin | VB- in isotopically enriched h10B15NThe University of Tokyo / NIMS | T2* (free induction) | 0.0138 µs ±0.0005 | Single device | Peer-reviewed Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride…Where: abstract (text as indexed in the OpenAlex record W7159606453) | |
| Superconducting | two frequency-tunable transmons, optically transmitted controlUniversity of Science and Technology of China | Two-qubit gate fidelity | 99.676% ±0.041 | Single device | Preprint Li et al., arXiv:2608.19602Where: abstract (arXiv abstract page) | |
| Trapped ion | Mainz 40Ca+ trapped-ion processorUniversity of Mainz, TU Darmstadt | Single-qubit gate fidelity | 99.94% ±0.03 | Single device | Preprint Miklin et al., Sound and Efficient Certification of High-Quality Qubit Operations:…Where: Abstract | |
| Semiconductor spin | Si single-spin deviceRIKEN Center for Emergent Matter Science / QuTech | Single-qubit gate fidelity | ≥ 99.999% | Single device | Preprint arXiv:2608.11072 (single-qubit gate fidelity beyond 99.999%)Where: abstract (text as indexed in the OpenAlex record W7202242994) | |
| Semiconductor spin | four SiMOS devices fabricated with extreme-ultraviolet lithographyIMEC; UNSW Sydney | Two-qubit gate fidelity | 99.1% | Best | Preprint Caekenberghe et al., arXiv:2607.13121Where: abstract (arXiv abstract page) | |
| Superconducting | 84-qubit processorBeijing Academy of Quantum Information Sciences | Two-qubit gate fidelity | 99.25% | Median | Preprint Zhang et al., arXiv:2607.01422Where: abstract (arXiv abstract page) | |
| Semiconductor spin | Ge 2DHG device from enriched 70GeH4Beijing Academy of Quantum Information Sciences | T2* (free induction) | ≥ 20 µs | Single device | Preprint arXiv:2606.28695Where: abstract (text as indexed in the OpenAlex record W7166726047) | |
| Superconducting | 64-qubit fixed-frequency transmon chipThe University of Osaka; Center for Quantum Information and Quantum Biology, The University of Osaka | Two-qubit gate fidelity | 98.34% | Single device | Preprint Machino et al., arXiv:2606.13010Where: abstract (arXiv abstract page) | |
| Superconducting | double transmon coupler deviceUniversity of Massachusetts Lowell; U.S. Air Force Research Laboratory Information Directorate | Two-qubit gate fidelity | 99.827% | Single device | Preprint Tiwari et al., arXiv:2604.27080Where: abstract (arXiv abstract page) | |
| Neutral atom | Harvard neutral-atom arrayHarvard University | Two-qubit gate fidelityPost-selected | 99.941% ±0.003 | Single device | Preprint Evered et al., High-fidelity entangling gates and nonlocal circuits with neutral at…Where: text: abstract and p.2, Fig. 2B | |
| Neutral atom | Harvard neutral-atom arrayHarvard University | Two-qubit gate fidelity | 99.854% ±0.004 | Single device | Preprint Evered et al., High-fidelity entangling gates and nonlocal circuits with neutral at…Where: text: abstract and p.2, Fig. 2B | |
| Superconducting | fluxonium tunable-coupler processorQuantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area | Two-qubit gate fidelity | 99.9% | Best | Preprint Zhan et al., arXiv:2604.13363Where: abstract (arXiv abstract page) | |
| Superconducting | two-transmon device, adiabatic CZRigetti Computing | Two-qubit gate fidelity | 99.878% | Mean | Preprint Chen et al., arXiv:2604.05048Where: abstract (arXiv abstract page) | |
| Semiconductor spin | AEON exchange-only qubitHRL Laboratories / UCLA | Single-qubit gate fidelity | 99.86% | Single device | Peer-reviewed Demonstration of an always-on exchange-only spin qubit, Nat. Commun. (2026)Where: abstract (text as indexed in the OpenAlex record W7148831401) | |
| Trapped ion | Tsinghua Yb+/Ba+ ion-pair clock qubitTsinghua University | T2 Ramsey | 37700 s ±10900 | Single device | Preprint Pi et al., Beyond-Ten-Hour Coherence in a Decoherence-Free Trapped-Ion Clock Qubit,…Where: Abstract | |
| Trapped ion | ion crystals up to 12 ions, structured-light gateUniversität Innsbruck; Alpine Quantum Technologies | Two-qubit gate fidelity | error 0.005 | Single device | Preprint Faorlin et al., arXiv:2603.07548Where: abstract (arXiv abstract page) | |
| Semiconductor spin | dressed ST qubit in GeIBM Research Zurich | Single-qubit gate fidelity | 99.68% | Single device | Peer-reviewed A dressed singlet-triplet qubit in germanium, Nat. Commun. (2026)Where: abstract (text as indexed in the OpenAlex record W4406841304) | |
| Semiconductor spin | dressed ST qubit in GeIBM Research Zurich | T2* (free induction) | 1.9 µs | Single device | Peer-reviewed A dressed singlet-triplet qubit in germanium, Nat. Commun. (2026)Where: abstract (text as indexed in the OpenAlex record W4406841304) | |
| Trapped ion | Quantinuum Helios (98 qubits)Quantinuum | Single-qubit gate fidelity | 99.9975% ±0.0001 | Mean | Preprint Ransford et al., Helios: A 98-qubit trapped-ion quantum computer, arXiv:2511.05465Where: Abstract | |
| Trapped ion | Quantinuum Helios (98 qubits)Quantinuum | Two-qubit gate fidelity | 99.921% ±0.002 | Mean | Preprint Ransford et al., Helios: A 98-qubit trapped-ion quantum computer, arXiv:2511.05465Where: Abstract | |
| Trapped ion | Quantinuum Helios (98 qubits)Quantinuum | State preparation and measurement fidelity | 99.952% ±0.006 | Mean | Preprint Ransford et al., Helios: A 98-qubit trapped-ion quantum computer, arXiv:2511.05465Where: Abstract | |
| Trapped ion | Oxford Ionics (IonQ) smooth-gate demonstrationOxford Ionics (an IonQ company) | Two-qubit gate fidelity | 99.9916% ±0.0007 | Single device | Preprint Hughes et al., Trapped-ion two-qubit gates with >99.99% fidelity without ground-sta…Where: Abstract | |
| Defect spin | single GeV- centre with 13C neighbourForschungszentrum Julich / Universitat Ulm | Readout fidelity | 95.8% | Single device | Preprint arXiv:2510.09164Where: abstract (text as indexed in the OpenAlex record W4417123838) | |
| Defect spin | single GeV- centre with 13C neighbourForschungszentrum Julich / Universitat Ulm | Readout fidelity | 93.7% | Single device | Preprint arXiv:2510.09164Where: abstract (text as indexed in the OpenAlex record W4417123838) | |
| Trapped ion | all-electronic maximally entangling Molmer-Sorensen gateUniversity of Oxford | Two-qubit gate fidelity | error 0.00026 ±0.00002 | Single device | Preprint Sutherland et al., arXiv:2510.09508Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit foundry devices (4 devices), 28SiUNSW Sydney / Diraq | Single-qubit gate fidelity | ≥ 99% | Single device | Peer-reviewed Steinacker et al., Nature (2025), DOI 10.1038/s41586-025-09531-9Where: abstract (text as indexed in the OpenAlex record search result for the published version) | |
| Semiconductor spin | 2-qubit foundry devices (4 devices), 28SiUNSW Sydney / Diraq | Two-qubit gate fidelity | ≥ 99% | Single device | Peer-reviewed Steinacker et al., Nature (2025), DOI 10.1038/s41586-025-09531-9Where: abstract (text as indexed in the OpenAlex record search result for the published version) | |
| Semiconductor spin | 2-qubit foundry devices (4 devices), 28SiUNSW Sydney / Diraq | State preparation and measurement fidelity | 99.9% | Best | Peer-reviewed Steinacker et al., Nature (2025), DOI 10.1038/s41586-025-09531-9Where: abstract (text as indexed in the OpenAlex record search result for the published version) | |
| Semiconductor spin | 2-qubit foundry devices (4 devices), 28SiUNSW Sydney / Diraq | T1 (energy relaxation) | 9.5 s | Best | Peer-reviewed Steinacker et al., Nature (2025), DOI 10.1038/s41586-025-09531-9Where: abstract (text as indexed in the OpenAlex record search result for the published version) | |
| Semiconductor spin | 2-qubit foundry devices (4 devices), 28SiUNSW Sydney / Diraq | T2 echo | 1.9 ms | Best | Peer-reviewed Steinacker et al., Nature (2025), DOI 10.1038/s41586-025-09531-9Where: abstract (text as indexed in the OpenAlex record search result for the published version) | |
| Semiconductor spin | 2-qubit foundry devices (4 devices), 28SiUNSW Sydney / Diraq | T2* (free induction) | 40.6 µs | Best | Peer-reviewed Steinacker et al., Nature (2025), DOI 10.1038/s41586-025-09531-9Where: abstract (text as indexed in the OpenAlex record search result for the published version) | |
| Trapped ion | 43Ca+-88Sr+ mixed-species gateUniversity of Oxford | Two-qubit gate fidelity | 99.8% | Single device | Preprint Schäfer et al., arXiv:2509.17893Where: abstract (arXiv abstract page) | |
| Trapped ion | 43Ca+-88Sr+ mixed-species gateUniversity of Oxford | Two-qubit gate fidelity | 99.6% | Single device | Preprint Schäfer et al., arXiv:2509.17893Where: text: p.1 of the arXiv PDF | |
| Superconducting | two-transmon tunable-coupler deviceIQM | Two-qubit gate fidelity | 99.93% | Mean | Preprint Marxer et al., arXiv:2508.16437Where: abstract (arXiv abstract page) | |
| Trapped ion | 5-ion 40Ca+ chain, axial modesUniversity of Science and Technology of China | Two-qubit gate fidelity | ≥ 99% | Best | Preprint Zhao et al., arXiv:2507.00504Where: text: p.1 of the arXiv PDF | |
| Semiconductor spin | 2D Si arrayQuTech, Delft University of Technology | Single-qubit gate fidelity | ≥ 99.5% ±0.06 | Single device | Peer-reviewed Baseband control of single-electron silicon spin qubits in two dimensions, Nat. Com…Where: abstract (text as indexed in the OpenAlex record W4411889147) | |
| Neutral atom | Harvard 3,000-qubit continuously reloaded arrayHarvard University | T2 echo | 1.15 s ±0.03 | Single device | Preprint Chiu et al., Continuous operation of a coherent 3,000-qubit system, arXiv:2506.20660Where: Sec. on storage qubit coherence (p5) | |
| Neutral atom | Harvard/MIT/QuEra 448-atom architectureHarvard University, MIT, QuEra Computing | Single-qubit gate fidelity | 99.9% | Single device | Preprint Bluvstein et al., Architectural mechanisms of a universal fault-tolerant quantum co…Where: Methods (p19) | |
| Neutral atom | Harvard/MIT/QuEra 448-atom architectureHarvard University, MIT, QuEra Computing | Two-qubit gate fidelity | 99.5% | Best | Preprint Bluvstein et al., Architectural mechanisms of a universal fault-tolerant quantum co…Where: Extended Data Fig. 6g (p15) | |
| Neutral atom | MPQ 88Sr tweezer arrayMPQ Garching, LMU Munich | Single-qubit gate fidelity | 99.3% ±0.1 | Single device | Preprint Tao et al., Universal gates for a metastable qubit in strontium-88, arXiv:2506.10714Where: Abstract | |
| Neutral atom | MPQ 88Sr tweezer arrayMPQ Garching, LMU Munich | Two-qubit gate fidelity | 99.45% ±0.06 | Single device | Preprint Tao et al., Universal gates for a metastable qubit in strontium-88, arXiv:2506.10714Where: Abstract | |
| Trapped ion | Quantinuum System Model H2Quantinuum | Two-qubit gate fidelityNot comparable | 99.94% ±0.01 | Single device | Preprint Haghshenas et al., Digital quantum magnetism on a trapped-ion quantum computer, arX…Where: Abstract | |
| Defect spin | NV electron-nuclear registerQuTech, Delft University of Technology / Element Six | Single-qubit gate fidelity | 99.999% ±0.001 | Best | Peer-reviewed Universal high-fidelity quantum gates for spin qubits in diamond, Phys. Rev. Applie…Where: abstract (text as indexed in the OpenAlex record W4408695390) | |
| Defect spin | NV electron-nuclear registerQuTech, Delft University of Technology / Element Six | Two-qubit gate fidelity | 99.93% ±0.05 | Single device | Peer-reviewed Universal high-fidelity quantum gates for spin qubits in diamond, Phys. Rev. Applie…Where: abstract (text as indexed in the OpenAlex record W4408695390) | |
| Superconducting | Ta-on-silicon transmon, best qubitPrinceton University | T1 (energy relaxation) | 1.68 ms ±0.1 | Best | Preprint Bland et al., arXiv:2503.14798Where: abstract; text p.1 ("T1 up to 1.68 +/- 0.1 ms") | |
| Superconducting | Ta-on-silicon transmonsPrinceton University | T1 (energy relaxation) | 0.45 ms ±0.18 | Mean | Preprint Bland et al., arXiv:2503.14798Where: text: p.1, mean of time-averaged T1 over 45 qubits | |
| Superconducting | Ta-on-silicon transmon, best qubitPrinceton University | T1 (energy relaxation) | 1 ms | Single device | Preprint Bland et al., arXiv:2503.14798Where: text: p.1, time-averaged T1 of the best qubit over 88 h | |
| Semiconductor spin | mobile (shuttled) spin qubits in siliconQuTech; Delft University of Technology | Two-qubit gate fidelity | 99% | Single device | Preprint Matsumoto et al., arXiv:2503.15434Where: abstract (arXiv abstract page) | |
| Photonic | PsiQuantum manufacturable silicon-photonic modulesPsiQuantum | State preparation and measurement fidelityNot comparable | 99.98% ±0.01 | Single device | Peer-reviewed A manufacturable platform for photonic quantum computing, Nature (2025)Where: abstract (text as indexed in the OpenAlex record W4407956947) | |
| Superconducting | two fluxoniums with non-local couplerTsinghua University; Beijing Academy of Quantum Information Sciences | Two-qubit gate fidelity | 99.37% | Single device | Preprint Xiong et al., arXiv:2502.18902Where: abstract (arXiv abstract page) | |
| Superconducting | transmon-coupler-transmonBeijing Academy of Quantum Information Sciences | Two-qubit gate fidelity | 99.37% ±0.07 | Mean | Preprint Chen et al., arXiv:2502.03612Where: abstract (arXiv abstract page) | |
| Superconducting | Zuchongzhi 3.0 (105 qubits)University of Science and Technology of China | Single-qubit gate fidelityPauli error | error 0.1% | Mean | Preprint Gao et al., arXiv:2412.11924Where: text: p.2 (Fig. 2a) | |
| Superconducting | Zuchongzhi 3.0 (105 qubits)University of Science and Technology of China | Two-qubit gate fidelityPauli error | error 0.38% | Mean | Preprint Gao et al., arXiv:2412.11924Where: text: p.2 (Fig. 2b) | |
| Superconducting | Zuchongzhi 3.0 (105 qubits)University of Science and Technology of China | Readout fidelity | error 0.82% | Mean | Preprint Gao et al., arXiv:2412.11924Where: text: p.2 (Fig. 2c) | |
| Superconducting | Zuchongzhi 3.0 (105 qubits)University of Science and Technology of China | T1 (energy relaxation) | 71.6 µs ±13.8 | Mean | Preprint Gao et al., arXiv:2412.11924Where: Table S1 (p.11), 83-qubit subset | |
| Superconducting | Zuchongzhi 3.0 (105 qubits)University of Science and Technology of China | T1 (energy relaxation) | 73.4 µs | Median | Preprint Gao et al., arXiv:2412.11924Where: Table S1 (p.11), 83-qubit subset | |
| Superconducting | Zuchongzhi 3.0 (105 qubits)University of Science and Technology of China | T2 dynamical decoupling | 57.8 µs ±15.3 | Mean | Preprint Gao et al., arXiv:2412.11924Where: Table S1 (p.11), 83-qubit subset | |
| Superconducting | Zuchongzhi 3.0 (105 qubits)University of Science and Technology of China | T2 dynamical decoupling | 56.5 µs | Median | Preprint Gao et al., arXiv:2412.11924Where: Table S1 (p.11), 83-qubit subset | |
| Trapped ion | Oxford Ionics surface-electrode trap (single ion)Oxford Ionics | Single-qubit gate fidelity | 99.999985% ±0.00004 | Best | Preprint Smith et al., Single-qubit gates with errors at the 10^{-7} level, arXiv:2412.04421Where: Abstract | |
| Neutral atom | Atom Computing Yb arrayAtom Computing | Single-qubit gate fidelity | 99.963% ±0.002 | Single device | Preprint Muniz et al., High-fidelity universal gates in the ^{171}Yb ground state nuclear sp…Where: p1 | |
| Neutral atom | Atom Computing Yb arrayAtom Computing | Two-qubit gate fidelityPost-selected | 99.72% ±0.03 | Best | Preprint Muniz et al., High-fidelity universal gates in the ^{171}Yb ground state nuclear sp…Where: Abstract | |
| Neutral atom | Atom Computing Yb arrayAtom Computing | Two-qubit gate fidelityPost-selected | 99.84% ±0.06 | Best | Preprint Muniz et al., High-fidelity universal gates in the ^{171}Yb ground state nuclear sp…Where: p1 | |
| Neutral atom | Atom Computing Yb arrayAtom Computing | Two-qubit gate fidelity | 99.4% ±0.03 | Single device | Preprint Muniz et al., High-fidelity universal gates in the ^{171}Yb ground state nuclear sp…Where: Abstract | |
| Semiconductor spin | 2-qubit foundry device, 28SiUNSW Sydney / Diraq | Single-qubit gate fidelity | ≥ 99% | Single device | Preprint Steinacker et al., arXiv:2410.15590Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit foundry device, 28SiUNSW Sydney / Diraq | Two-qubit gate fidelity | ≥ 99% | Single device | Preprint Steinacker et al., arXiv:2410.15590Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit foundry device, 28SiUNSW Sydney / Diraq | State preparation and measurement fidelity | ≥ 99.9% | Single device | Preprint Steinacker et al., arXiv:2410.15590Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit foundry device, 28SiUNSW Sydney / Diraq | T1 (energy relaxation) | 6.3 s | Best | Preprint Steinacker et al., arXiv:2410.15590Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit foundry device, 28SiUNSW Sydney / Diraq | T2 echo | 803 µs | Best | Preprint Steinacker et al., arXiv:2410.15590Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit foundry device, 28SiUNSW Sydney / Diraq | T2* (free induction) | 30.4 µs | Best | Preprint Steinacker et al., arXiv:2410.15590Where: abstract (arXiv abstract page) | |
| Superconducting | two transmons with tunable couplerChinese Academy of Sciences; Institute of Physics | Two-qubit gate fidelity | 99.61% ±0.04 | Single device | Preprint Li et al., arXiv:2410.15041Where: abstract (arXiv abstract page) | |
| Superconducting | two transmons with tunable couplerChinese Academy of Sciences; Institute of Physics | Two-qubit gate fidelity | 99.82% ±0.02 | Single device | Preprint Li et al., arXiv:2410.15041Where: abstract (arXiv abstract page) | |
| Semiconductor spin | two-qubit device in natural Si/SiGeUniversity of Science and Technology of China | Two-qubit gate fidelity | 91% | Single device | Preprint Wang et al., arXiv:2409.09747Where: abstract (arXiv abstract page) | |
| Trapped ion | Oxford single 137Ba+ ion (ground-level qubit)University of Oxford, Oxford Ionics | State preparation and measurement fidelity | 99.9992% ±0.0004 | Best | Preprint Sotirova et al., High-fidelity heralded quantum state preparation and measurement,…Where: Abstract | |
| Trapped ion | Oxford single 137Ba+ ion (metastable-level qubit)University of Oxford, Oxford Ionics | State preparation and measurement fidelity | 99.9995% ±0.0004 | Best | Preprint Sotirova et al., High-fidelity heralded quantum state preparation and measurement,…Where: Abstract | |
| Trapped ion | Oxford single 137Ba+ ion (optical qubit)University of Oxford, Oxford Ionics | State preparation and measurement fidelity | 99.9993% ±0.0004 | Best | Preprint Sotirova et al., High-fidelity heralded quantum state preparation and measurement,…Where: Abstract | |
| Defect spin | SnV- with superconducting waveguideKarlsruhe Institute of Technology / Saarland University | T2 dynamical decoupling | 10 ms | Best | Peer-reviewed Microwave control of the tin-vacancy spin qubit with a superconducting waveguide, P…Where: abstract (text as indexed in the OpenAlex record W4401904839) | |
| Defect spin | SnV- with superconducting waveguideKarlsruhe Institute of Technology / Saarland University | T2 echo | 430 µs | Best | Peer-reviewed Microwave control of the tin-vacancy spin qubit with a superconducting waveguide, P…Where: abstract (text as indexed in the OpenAlex record W4401904839) | |
| Superconducting | Willow-generation 105-qubit processorGoogle Quantum AI | T1 (energy relaxation) | 68 µs | Mean | Preprint Google Quantum AI, arXiv:2408.13687Where: text: p.2 (Section II) | |
| Superconducting | Willow-generation 105-qubit processorGoogle Quantum AI | T2 dynamical decoupling | 89 µs | Mean | Preprint Google Quantum AI, arXiv:2408.13687Where: text: p.2 (Section II) | |
| Neutral atom | Atom Computing Cs arrayAtom Computing | Single-qubit gate fidelity | 99.902% ±0.008 | Single device | Preprint Radnaev et al., A universal neutral-atom quantum computer with individual optical a…Where: Abstract | |
| Neutral atom | Atom Computing Cs arrayAtom Computing | Two-qubit gate fidelity | 99.35% ±0.04 | Single device | Preprint Radnaev et al., A universal neutral-atom quantum computer with individual optical a…Where: Abstract | |
| Neutral atom | Atom Computing Cs arrayAtom Computing | Two-qubit gate fidelityPost-selected | 99.73% ±0.03 | Single device | Preprint Radnaev et al., A universal neutral-atom quantum computer with individual optical a…Where: Abstract | |
| Neutral atom | Caltech 88Sr Rydberg tweezer arrayCaltech | Two-qubit gate fidelity | 99.71% ±0.05 | Mean | Preprint Tsai et al., Benchmarking and fidelity response theory of high-fidelity Rydberg ent…Where: Abstract | |
| Superconducting | two remote transmonsBeijing Academy of Quantum Information Sciences | Two-qubit gate fidelity | 99.15% ±0.02 | Single device | Preprint Song et al., arXiv:2407.20338Where: abstract (arXiv abstract page) | |
| Superconducting | Aalto high-coherence transmonAalto University | Qubit frequency | 2.9 GHz | Single device | Preprint Tuokkola et al., arXiv:2407.18778Where: abstract | |
| Superconducting | Aalto high-coherence transmonAalto University | T1 (energy relaxation) | 666 µs ±33 | Best | Preprint Tuokkola et al., arXiv:2407.18778Where: abstract (maximum) | |
| Superconducting | Aalto high-coherence transmonAalto University | T1 (energy relaxation) | 425 µs | Median | Preprint Tuokkola et al., arXiv:2407.18778Where: abstract | |
| Superconducting | Aalto high-coherence transmonAalto University | T2 echo | 1057 µs ±138 | Best | Preprint Tuokkola et al., arXiv:2407.18778Where: abstract (maximum) | |
| Superconducting | Aalto high-coherence transmonAalto University | T2 echo | 541 µs | Median | Preprint Tuokkola et al., arXiv:2407.18778Where: abstract | |
| Superconducting | inductively coupled fluxonium pairUniversity of Maryland, College Park; University of Wisconsin–Madison | Two-qubit gate fidelity | 99.94% | Best | Preprint Lin et al., arXiv:2407.15783Where: abstract (arXiv abstract page) | |
| Trapped ion | Oxford Ionics seven-zone chipOxford Ionics | Bell-state fidelity | 99.97% ±0.01 | Single device | Preprint Löschnauer et al., Scalable, high-fidelity all-electronic control of trapped-ion qu…Where: Abstract | |
| Trapped ion | Oxford Ionics seven-zone chipOxford Ionics | Single-qubit gate fidelity | 99.99916% ±0.00007 | Single device | Preprint Löschnauer et al., Scalable, high-fidelity all-electronic control of trapped-ion qu…Where: Abstract | |
| Superconducting | transmon processor with couplerIBM Research - Thomas J. Watson Research Center | Two-qubit gate fidelity | 99.4% | Best | Preprint Kumph et al., arXiv:2406.11770Where: abstract (arXiv abstract page) | |
| Superconducting | fluxonium with circularly driven gatesMassachusetts Institute of Technology | Single-qubit gate fidelity | 99.99664% ±0.00008 | Single device | Preprint Rower et al., arXiv:2406.08295Where: Fig. 10 caption (p.14): F = 99.99664(8)%, circular drive, 700 us wait, gate time ~7.0 ns | |
| Neutral atom | Princeton 171Yb tweezer arrayPrinceton University | Two-qubit gate fidelity | 99.4% ±0.1 | Single device | Preprint Peper et al., Spectroscopy and modeling of ^{171}Yb Rydberg states for high-fidelit…Where: Abstract | |
| Semiconductor spin | two hole-spin qubits in GeIBM Research Zurich / University of Basel / RIKEN | Two-qubit gate time | 24 ns | Single device | Peer-reviewed Anisotropic exchange interaction of two hole-spin qubits, Nat. Phys. (2024)Where: abstract (text as indexed in the OpenAlex record W4396673154) | |
| Defect spin | single nuclear spin in SiCUniversity of Science and Technology of China / SIMIT | Readout fidelity | 94.95% | Single device | Peer-reviewed Single-shot readout of a nuclear spin in silicon carbide, Phys. Rev. Lett. 132, 180…Where: abstract (text as indexed in the OpenAlex record W4396577999) | |
| Defect spin | single nuclear spin in SiCUniversity of Science and Technology of China / SIMIT | Readout fidelity | 99.03% | Single device | Peer-reviewed Single-shot readout of a nuclear spin in silicon carbide, Phys. Rev. Lett. 132, 180…Where: abstract (text as indexed in the OpenAlex record W4396577999) | |
| Superconducting | Kerr-cat SNAILmonUniversity of California, Berkeley | T1 (energy relaxation) | 38.5 µs | Single device | Preprint Hajr et al., arXiv:2404.16697Where: text p.3 and p.6, single-photon (Fock qubit) decay time | |
| Semiconductor spin | 4-qubit donor processor (3 P atoms + electron), 28SiSilicon Quantum Computing / UNSW Sydney | Single-qubit gate fidelity | ≥ 99.9% | Single device | Preprint Thorvaldson et al., arXiv:2404.08741 (Nat. Nanotechnol. 20, 472)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 4-qubit donor processor (3 P atoms + electron), 28SiSilicon Quantum Computing / UNSW Sydney | Two-qubit gate fidelity | ≥ 99% | Single device | Preprint Thorvaldson et al., arXiv:2404.08741 (Nat. Nanotechnol. 20, 472)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 4-qubit donor processor (3 P atoms + electron), 28SiSilicon Quantum Computing / UNSW Sydney | Readout fidelity | ≥ 99% | Single device | Preprint Thorvaldson et al., arXiv:2404.08741 (Nat. Nanotechnol. 20, 472)Where: abstract (arXiv abstract page) | |
| Photonic | Quandela single-photon platformQuandela / CNRS | Single-qubit gate fidelityNot comparable | 99.6% ±0.1 | Single device | Peer-reviewed A versatile single-photon-based quantum computing platform, Nat. Photonics (2024)Where: abstract (text as indexed in the OpenAlex record W4393200016) | |
| Photonic | Quandela single-photon platformQuandela / CNRS | Two-qubit gate fidelityNot comparable | 93.8% ±0.6 | Single device | Peer-reviewed A versatile single-photon-based quantum computing platform, Nat. Photonics (2024)Where: abstract (text as indexed in the OpenAlex record W4393200016) | |
| Neutral atom | Caltech 6,100-atom arrayCaltech | Readout fidelity | ≥ 99.99% | Single device | Preprint Manetsch et al., A tweezer array with 6100 highly coherent atomic qubits, arXiv:240…Where: Abstract | |
| Neutral atom | Caltech 6,100-atom arrayCaltech | T2 echo | 12.6 s ±0.1 | Single device | Preprint Manetsch et al., A tweezer array with 6100 highly coherent atomic qubits, arXiv:240…Where: Fig. 3 (p5) and Abstract | |
| Neutral atom | Caltech 6,100-atom arrayCaltech | T2 Ramsey | 14 ms ±0.1 | Single device | Preprint Manetsch et al., A tweezer array with 6100 highly coherent atomic qubits, arXiv:240…Where: Fig. 3 (p5) | |
| Superconducting | two qubits with parametric coupling circuitBavarian Academy of Sciences and Humanities; Walther Meissner Institute | Two-qubit gate fidelity | 98.3% ±0.23 | Single device | Preprint Huber et al., arXiv:2403.02203Where: abstract (arXiv abstract page) | |
| Superconducting | two transmons with a double-transmon couplerRIKEN Center for Quantum Computing; Toshiba Corporation | Two-qubit gate fidelity | 99.9% ±0.01 | Single device | Preprint Li et al. (RIKEN, Toshiba), arXiv:2402.18926Where: text: abstract and p.2 | |
| Semiconductor spin | Si/SiGe hopping-spin processorQuTech, Delft University of Technology | Single-qubit gate fidelity | 99.97% | Single device | Preprint van Riggelen-Doelman et al., arXiv:2402.18382 (Science 385, 447)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | Si/SiGe hopping-spin processorQuTech, Delft University of Technology | Two-qubit gate fidelity | 99.3% | Single device | Preprint van Riggelen-Doelman et al., arXiv:2402.18382 (Science 385, 447)Where: abstract (arXiv abstract page) | |
| Neutral atom | Caltech 88Sr tweezer clockCaltech | Bell-state fidelity | 98.3% ±0.2 | Single device | Preprint Cao et al., Multi-qubit gates and Schr\"odinger cat states in an optical clock, arX…Where: Sec. 2 (p2) | |
| Neutral atom | Caltech 88Sr tweezer clockCaltech | Two-qubit gate fidelity | 99.62% ±0.03 | Mean | Preprint Finkelstein et al., Universal quantum operations and ancilla-based readout for twee…Where: Abstract | |
| Trapped ion | cryogenic surface trap, microwave Molmer-Sorensen gateUniversity of Oxford | Two-qubit gate fidelity | error 0.5% ±0.1 | Single device | Preprint Weber et al., arXiv:2402.12955Where: abstract (arXiv abstract page) | |
| Trapped ion | cryogenic surface trap, microwave Molmer-Sorensen gateUniversity of Oxford | Two-qubit gate fidelity | error 1% ±0.2 | Single device | Preprint Weber et al., arXiv:2402.12955Where: abstract (arXiv abstract page) | |
| Neutral atom | Harvard/MIT/QuEra reconfigurable arrayHarvard University, MIT, QuEra Computing | Two-qubit gate fidelity | 99.5% | Best | Preprint Bluvstein et al., Logical quantum processor based on reconfigurable atom arrays, ar…Where: Methods (p12) | |
| Neutral atom | Harvard/MIT/QuEra reconfigurable arrayHarvard University, MIT, QuEra Computing | Readout fidelity | 99.8% | Single device | Preprint Bluvstein et al., Logical quantum processor based on reconfigurable atom arrays, ar…Where: p2 and Methods | |
| Defect spin | SnV- in thin diamond membraneUniversity of Cambridge / University of Chicago | Single-qubit gate fidelity | 99.36% ±0.09 | Single device | Peer-reviewed Microwave-based quantum control and coherence protection of tin-vacancy spin qubits…Where: abstract (text as indexed in the OpenAlex record W4389133713) | |
| Superconducting | two fluxoniums with tunable inductive couplerNorthwestern University; University of Chicago | Two-qubit gate fidelity | 99.72% | Single device | Preprint Zhang et al., arXiv:2309.05720Where: text: p.1 of the arXiv PDF | |
| Superconducting | inductively coupled fluxonium pairAlibaba Group | Two-qubit gate fidelity | 99.53% | Mean | Preprint Ma et al., arXiv:2308.16040Where: abstract (arXiv abstract page) | |
| Superconducting | coaxial on-chip quantum memoriesYale University | T1 (energy relaxation) | 1.4 ms | Best | Preprint Ganjam et al., arXiv:2308.15539Where: abstract (single-photon T1 range 1.0-1.4 ms across memories) | |
| Superconducting | coaxial on-chip quantum memoriesYale University | T2 Ramsey | 2.7 ms | Best | Preprint Ganjam et al., arXiv:2308.15539Where: abstract (single-photon Ramsey range 2.0-2.7 ms across memories) | |
| Defect spin | single NV with SMART drivingUNSW Sydney / University of Stuttgart | Single-qubit gate fidelity | 99.3% ±0.2 | Single device | Peer-reviewed High-fidelity control of a nitrogen-vacancy-center spin qubit at room temperature u…Where: abstract (text as indexed in the OpenAlex record W4385708885) | |
| Defect spin | single NV with SMART drivingUNSW Sydney / University of Stuttgart | Single-qubit gate fidelity | 94% ±0.5 | Single device | Peer-reviewed High-fidelity control of a nitrogen-vacancy-center spin qubit at room temperature u…Where: abstract (text as indexed in the OpenAlex record W4385708885) | |
| Trapped ion | IonQ Forte (30 qubits)IonQ | Single-qubit gate fidelity | 99.98% | Median | Preprint Chen et al., Benchmarking a trapped-ion quantum computer with 30 qubits, arXiv:2308…Where: Fig. 3b and Sec. 4 (model parameters) | |
| Trapped ion | IonQ Forte (30 qubits)IonQ | Two-qubit gate fidelity | 99.722% | Best | Preprint Chen et al., Benchmarking a trapped-ion quantum computer with 30 qubits, arXiv:2308…Where: Fig. 4b and Sec. 3.1 | |
| Trapped ion | IonQ Forte (30 qubits)IonQ | Two-qubit gate fidelity | 99.536% | Median | Preprint Chen et al., Benchmarking a trapped-ion quantum computer with 30 qubits, arXiv:2308…Where: Fig. 4b and Sec. 3.1 | |
| Trapped ion | IonQ Forte (30 qubits)IonQ | State preparation and measurement fidelity | 99.5% | Mean | Preprint Chen et al., Benchmarking a trapped-ion quantum computer with 30 qubits, arXiv:2308…Where: Sec. 2 (system description) | |
| Superconducting | IBM Eagle ibm_kyiv (127 qubits)IBM Quantum | T1 (energy relaxation) | 288 µs | Median | Peer-reviewed Kim et al., Nature 618, 500Where: text: main text, experimental implementation paragraph | |
| Trapped ion | Oxford cryogenic (100 K) surface trapUniversity of Oxford | Single-qubit gate fidelity | 99.9966% | Mean | Preprint Leu et al., Fast, high-fidelity addressed single-qubit gates using efficient compos…Where: Abstract | |
| Trapped ion | Oxford cryogenic (100 K) surface trapUniversity of Oxford | Single-qubit gate fidelity | 99.99985% | Best | Preprint Leu et al., Fast, high-fidelity addressed single-qubit gates using efficient compos…Where: Abstract | |
| Trapped ion | Oxford cryogenic (100 K) surface trapUniversity of Oxford | Single-qubit gate time | 600 ns | Single device | Preprint Leu et al., Fast, high-fidelity addressed single-qubit gates using efficient compos…Where: Abstract | |
| Neutral atom | Princeton tweezer arrayPrinceton University | Single-qubit gate fidelity | 99.9% ±0.01 | Single device | Preprint Ma et al., High-fidelity gates with mid-circuit erasure conversion in a metastable…Where: Abstract | |
| Neutral atom | Princeton tweezer arrayPrinceton University | Two-qubit gate fidelity | 98% ±0.1 | Single device | Preprint Ma et al., High-fidelity gates with mid-circuit erasure conversion in a metastable…Where: Abstract | |
| Trapped ion | Quantinuum System Model H2 (32-qubit race-track)Quantinuum | Single-qubit gate fidelity | 99.9975% ±0.0003 | Mean | Preprint Moses et al., A Race Track Trapped-Ion Quantum Processor, arXiv:2305.03828Where: Abstract | |
| Trapped ion | Quantinuum System Model H2 (32-qubit race-track)Quantinuum | Two-qubit gate fidelity | 99.816% ±0.005 | Mean | Preprint Moses et al., A Race Track Trapped-Ion Quantum Processor, arXiv:2305.03828Where: Abstract | |
| Trapped ion | Quantinuum System Model H2 (32-qubit race-track)Quantinuum | State preparation and measurement fidelity | 99.84% ±0.01 | Mean | Preprint Moses et al., A Race Track Trapped-Ion Quantum Processor, arXiv:2305.03828Where: Abstract | |
| Neutral atom | Caltech 88Sr Rydberg tweezer arrayCaltech | Bell-state fidelity | ≥ 99.71% | Best | Preprint Scholl et al., Erasure conversion in a high-fidelity Rydberg quantum simulator, arX…Where: Abstract | |
| Neutral atom | Caltech 88Sr Rydberg tweezer arrayCaltech | Bell-state fidelity | ≥ 99.85% | Best | Preprint Scholl et al., Erasure conversion in a high-fidelity Rydberg quantum simulator, arX…Where: Abstract | |
| Superconducting | two transmons with parametric couplerNational Institute of Standards and Technology | Two-qubit gate fidelity | 99.47% ±0.07 | Mean | Preprint Jin et al., arXiv:2305.02907Where: abstract (arXiv abstract page) | |
| Superconducting | two transmons with parametric couplerNational Institute of Standards and Technology | Two-qubit gate fidelity | 99.44% ±0.09 | Mean | Preprint Jin et al., arXiv:2305.02907Where: abstract (arXiv abstract page) | |
| Superconducting | two fluxoniums with transmon coupler (FTF)Massachusetts Institute of Technology | Two-qubit gate fidelity | 99.922% ±0.009 | Best | Preprint Ding et al., arXiv:2304.06087Where: text p.2 ("average CZ gate fidelity of up to 99.922 +/- 0.009% in 50 ns") and p.7 (Fig. 5c, time-averaged value) | |
| Superconducting | two fluxoniums with transmon coupler (FTF)Massachusetts Institute of Technology | Two-qubit gate time | 50 ns | Single device | Preprint Ding et al., arXiv:2304.06087Where: text p.2 | |
| Neutral atom | Harvard/MIT/QuEra tweezer arrayHarvard University, MIT, QuEra Computing | Single-qubit gate fidelity | ≥ 99.97% | Single device | Preprint Evered et al., High-fidelity parallel entangling gates on a neutral atom quantum co…Where: Intro (p1) | |
| Neutral atom | Harvard/MIT/QuEra tweezer arrayHarvard University, MIT, QuEra Computing | Two-qubit gate fidelity | 99.5% | Best | Preprint Evered et al., High-fidelity parallel entangling gates on a neutral atom quantum co…Where: Abstract (p1) | |
| Semiconductor spin | 2-qubit SiMOS devicesUNSW Sydney | Two-qubit gate fidelityUpper end of range | 99.8% | Best | Preprint Tanttu et al., arXiv:2303.04090 (Nat. Phys. 20, 1804)Where: abstract (arXiv abstract page) | |
| Superconducting | superconducting cavity memoryWeizmann Institute of Science | T1 (energy relaxation) | 25.6 ms | Single device | Preprint Milul et al., arXiv:2302.06442Where: parameter table (p.6), cavity lifetime | |
| Superconducting | superconducting cavity memoryWeizmann Institute of Science | T2 Ramsey | 34 ms ±1 | Single device | Preprint Milul et al., arXiv:2302.06442Where: text p.3 (Fig. 2, sinusoidal-exponential fit), cavity coherence time | |
| Defect spin | hBN spin defect, room temperatureCardiff University / University of Exeter | T2 echo | 0.1 µs | Single device | Peer-reviewed Coherence protection of spin qubits in hexagonal boron nitride, Nat. Commun. 14 (20…Where: abstract (text as indexed in the OpenAlex record W4318336334) | |
| Semiconductor spin | Si CMOS hole qubitCEA Grenoble / Institut Neel | T2 echo | 88 µs | Best | Peer-reviewed Piot et al., Nat. Nanotechnol. 17, 1072 (2022)Where: abstract (text as indexed in the OpenAlex record W4296690338) | |
| Superconducting | IQM long-distance transmon coupler deviceIQM Quantum Computers | Two-qubit gate fidelity | 99.81% ±0.02 | Single device | Preprint Marxer et al., arXiv:2208.09460Where: abstract; text p.2 | |
| Superconducting | IQM long-distance transmon coupler deviceIQM Quantum Computers | Two-qubit gate time | 33 ns | Single device | Preprint Marxer et al., arXiv:2208.09460Where: text p.2 | |
| Trapped ion | Honeywell Quantinuum H1-1Honeywell Quantum Solutions (now Quantinuum) | Two-qubit gate fidelity | error 0.0026 ±0.0004 | Single device | Preprint Ryan-Anderson et al., arXiv:2208.01863Where: Table I (p3 of the arXiv PDF) | |
| Trapped ion | Honeywell Quantinuum H1-2Honeywell Quantum Solutions (now Quantinuum) | Two-qubit gate fidelity | error 0.0021 ±0.0003 | Single device | Preprint Ryan-Anderson et al., arXiv:2208.01863Where: Table I (p3 of the arXiv PDF) | |
| Trapped ion | Quantinuum 20-qubit QCCD (H1 generation)Quantinuum | State preparation and measurement fidelity | 99.68% ±0.02 | Mean | Preprint Ryan-Anderson et al., Implementing Fault-tolerant Entangling Gates on the Five-qubi…Where: Abstract | |
| Trapped ion | Quantinuum 20-qubit QCCD (H1 generation)Quantinuum | State preparation and measurement fidelity | 99.7% ±0.01 | Mean | Preprint Ryan-Anderson et al., Implementing Fault-tolerant Entangling Gates on the Five-qubi…Where: Abstract | |
| Superconducting | Sycamore 72-qubit deviceGoogle Quantum AI | T1 (energy relaxation) | 20 µs | Mean | Preprint Google Quantum AI, arXiv:2207.06431Where: text: p.2 | |
| Superconducting | Sycamore 72-qubit deviceGoogle Quantum AI | T2 dynamical decoupling | 30 µs | Mean | Preprint Google Quantum AI, arXiv:2207.06431Where: text: p.2 | |
| Defect spin | single SnV- centreElement Six / Ruhr University Bochum | T2* (free induction) | 5 µs ±1 | Single device | Peer-reviewed Coherence of a charge stabilised tin-vacancy spin in diamond, npj Quantum Inf. 8, 4…Where: abstract (text as indexed in the OpenAlex record W3207260240) | |
| Superconducting | two-fluxonium cross-resonanceUniversity of Massachusetts Amherst; Joint Quantum Institute | Two-qubit gate fidelity | 0.9949 ±0.0006 | Best | Preprint Dogan et al., arXiv:2204.11829Where: abstract (arXiv abstract page) | |
| Superconducting | two fluxoniums with tunable couplerNational University of Science and Technology; Bauman Moscow State Technical University | Two-qubit gate fidelity | 99.55% | Single device | Preprint Moskalenko et al., arXiv:2203.16302Where: abstract (arXiv abstract page) | |
| Superconducting | two fluxoniums with tunable couplerNational University of Science and Technology; Bauman Moscow State Technical University | Two-qubit gate fidelity | 99.23% | Single device | Preprint Moskalenko et al., arXiv:2203.16302Where: text: p.2 of the arXiv PDF | |
| Superconducting | two transmons with tunable couplerUniversity of Science and Technology of China; Shanghai Research Center for Quantum Sciences | Two-qubit gate fidelity | 99.38% ±0.34 | Single device | Preprint Li et al., arXiv:2202.06616Where: abstract (arXiv abstract page) | |
| Semiconductor spin | encoded exchange-only silicon quantum dot deviceHRL Laboratories | Two-qubit gate fidelity | 96.3% ±0.7 | Single device | Preprint Weinstein et al., arXiv:2202.03605Where: text: p.2 of the arXiv PDF | |
| Semiconductor spin | encoded exchange-only silicon quantum dot deviceHRL Laboratories | Two-qubit gate fidelity | 99.3% ±0.5 | Single device | Preprint Weinstein et al., arXiv:2202.03605Where: abstract (arXiv abstract page) | |
| Semiconductor spin | Si/SiGe shuttling-mode 2-qubit gateRIKEN Center for Emergent Matter Science | Two-qubit gate fidelity | 93% | Single device | Preprint Noiri et al., arXiv:2202.01357 (Nat. Commun. 13, 5740)Where: abstract (arXiv abstract page) | |
| Defect spin | single spin in isotopically purified SiCArgonne National Laboratory / University of Chicago | Readout fidelity | ≥ 80% | Single device | Peer-reviewed Anderson et al., Sci. Adv. 8 (2022), five-second coherence of a single spin in SiCWhere: abstract (text as indexed in the OpenAlex record W3203210826) | |
| Defect spin | single spin in isotopically purified SiCArgonne National Laboratory / University of Chicago | T2 dynamical decoupling | ≥ 5 s | Single device | Peer-reviewed Anderson et al., Sci. Adv. 8 (2022), five-second coherence of a single spin in SiCWhere: abstract (text as indexed in the OpenAlex record W3203210826) | |
| Neutral atom | ColdQuanta/Wisconsin programmable arrayColdQuanta (Infleqtion), University of Wisconsin-Madison | Bell-state fidelity | 92.7% ±1.3 | Best | Preprint Graham et al., Demonstration of multi-qubit entanglement and algorithms on a progra…Where: p2 | |
| Superconducting | Zuchongzhi 2.1 (17-qubit surface code)University of Science and Technology of China | Single-qubit gate fidelity | error 0.098% | Mean | Preprint Zhao et al., arXiv:2112.13505Where: text: p.2 (System calibration), Fig. 2a | |
| Superconducting | Zuchongzhi 2.1 (17-qubit surface code)University of Science and Technology of China | Two-qubit gate fidelity | error 1.035% | Mean | Preprint Zhao et al., arXiv:2112.13505Where: text: p.2 (System calibration), Fig. 2a | |
| Superconducting | Zuchongzhi 2.1 (17-qubit surface code)University of Science and Technology of China | Single-qubit gate time | 25 ns | Single device | Preprint Zhao et al., arXiv:2112.13505Where: text: p.2 (System calibration) | |
| Superconducting | Zuchongzhi 2.1 (17-qubit surface code)University of Science and Technology of China | Two-qubit gate time | 32 ns | Single device | Preprint Zhao et al., arXiv:2112.13505Where: text: p.2 (System calibration) | |
| Superconducting | Zuchongzhi 2.1 (17-qubit surface code)University of Science and Technology of China | Readout fidelity | error 4.752% | Mean | Preprint Zhao et al., arXiv:2112.13505Where: text: p.2 (System calibration), Fig. 2a | |
| Superconducting | Zuchongzhi 2.1 (17-qubit surface code)University of Science and Technology of China | Readout time | 1.5 µs | Single device | Preprint Zhao et al., arXiv:2112.13505Where: text: p.2 (System calibration) | |
| Neutral atom | JILA 171Yb tweezer arrayJILA, University of Colorado | Single-qubit gate fidelity | 99.48% ±0.05 | Mean | Preprint Jenkins et al., Ytterbium nuclear-spin qubits in an optical tweezer array, arXiv:21…Where: Abstract | |
| Neutral atom | JILA 171Yb tweezer arrayJILA, University of Colorado | T2 echo | 7.9 s ±0.4 | Single device | Preprint Jenkins et al., Ytterbium nuclear-spin qubits in an optical tweezer array, arXiv:21…Where: Abstract | |
| Neutral atom | JILA 171Yb tweezer arrayJILA, University of Colorado | T2 Ramsey | 3.7 s ±0.4 | Single device | Preprint Jenkins et al., Ytterbium nuclear-spin qubits in an optical tweezer array, arXiv:21…Where: Abstract | |
| Neutral atom | Princeton 171Yb tweezer arrayPrinceton University | Single-qubit gate fidelity | 99.959% ±0.006 | Mean | Preprint Ma et al., Universal gate operations on nuclear spin qubits in an optical tweezer a…Where: Abstract | |
| Neutral atom | Princeton 171Yb tweezer arrayPrinceton University | T1 (energy relaxation) | 20 s ±2 | Single device | Preprint Ma et al., Universal gate operations on nuclear spin qubits in an optical tweezer a…Where: Abstract and p1 | |
| Neutral atom | Princeton 171Yb tweezer arrayPrinceton University | T2 echo | 5 s ±1 | Single device | Preprint Ma et al., Universal gate operations on nuclear spin qubits in an optical tweezer a…Where: p3 | |
| Neutral atom | Princeton 171Yb tweezer arrayPrinceton University | T2 Ramsey | 1.24 s ±0.05 | Single device | Preprint Ma et al., Universal gate operations on nuclear spin qubits in an optical tweezer a…Where: Abstract | |
| Trapped ion | NIST indirect-readout trapNIST Boulder | Readout fidelity | 99.988% | Best | Preprint Erickson et al., High-fidelity indirect readout of trapped-ion hyperfine qubits, ar…Where: Abstract | |
| Superconducting | ETH 17-qubit surface-code deviceETH Zurich | Single-qubit gate fidelity | error 0.09% ±0.04 | Mean | Preprint Krinner et al., arXiv:2112.03708Where: Fig. 5 caption (p.9) | |
| Superconducting | ETH 17-qubit surface-code deviceETH Zurich | Two-qubit gate fidelity | error 1.5% ±1 | Mean | Preprint Krinner et al., arXiv:2112.03708Where: Fig. 5 caption (p.9) | |
| Superconducting | ETH 17-qubit surface-code deviceETH Zurich | Two-qubit gate time | 98 ns | Mean | Preprint Krinner et al., arXiv:2112.03708Where: text: p.9 (Appendix D), total average two-qubit gate duration incl. buffers | |
| Superconducting | ETH 17-qubit surface-code deviceETH Zurich | Readout fidelity | error 0.009 ±0.007 | Mean | Preprint Krinner et al., arXiv:2112.03708Where: text: p.3 | |
| Superconducting | ETH 17-qubit surface-code deviceETH Zurich | T2 Ramsey | 37.5 µs | Mean | Preprint Krinner et al., arXiv:2112.03708Where: text: p.6 | |
| Superconducting | flip-chip integrated processorChalmers University of Technology | Two-qubit gate fidelity | ≥ 98.6% | Single device | Preprint Kosen et al., arXiv:2112.02717Where: abstract (arXiv abstract page) | |
| Trapped ion | Innsbruck ion-trap Molmer-Sorensen gate calibrated by Bayesian protocolUniversität Innsbruck | Two-qubit gate fidelity | error 0.0013 ±0.0001 | Median | Preprint Gerster et al., arXiv:2112.01411Where: abstract (arXiv abstract page) | |
| Defect spin | single SnV- centreQuTech, Delft University of Technology / MIT | T2 dynamical decoupling | 0.3 ms ±0.08 | Single device | Peer-reviewed Debroux et al., Phys. Rev. X 11, 041041 (2021)Where: abstract (text as indexed in the OpenAlex record W3216877328) | |
| Defect spin | single SnV- centreQuTech, Delft University of Technology / MIT | T2* (free induction) | 1.3 µs ±0.3 | Single device | Peer-reviewed Debroux et al., Phys. Rev. X 11, 041041 (2021)Where: abstract (text as indexed in the OpenAlex record W3216877328) | |
| Superconducting | two-fluxonium processorAlibaba Quantum Laboratory | Single-qubit gate fidelity | 99.97% | Single device | Preprint Bao et al., arXiv:2111.13504Where: abstract | |
| Superconducting | two-fluxonium processorAlibaba Quantum Laboratory | Two-qubit gate fidelity | 99.72% | Best | Preprint Bao et al., arXiv:2111.13504Where: abstract ("up to 99.72%") | |
| Semiconductor spin | 2-qubit Si/SiGe processorPrinceton University | Single-qubit gate fidelity | ≥ 99% | Single device | Preprint Mills et al., arXiv:2111.11937 (Sci. Adv. 8, eabn5130)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit Si/SiGe processorPrinceton University | Two-qubit gate fidelity | 99.81% ±0.17 | Single device | Preprint Mills et al., arXiv:2111.11937 (Sci. Adv. 8, eabn5130)Where: text: p.4 and Fig. 4 | |
| Semiconductor spin | 2-qubit Si/SiGe processorPrinceton University | State preparation and measurement fidelity | ≥ 97% | Single device | Preprint Mills et al., arXiv:2111.11937 (Sci. Adv. 8, eabn5130)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2D spin-qubit arrayQuTech, Delft University of Technology | Single-qubit gate fidelity | 99.992% ±0.001 | Best | Preprint Lawrie et al., arXiv:2109.07837 (Nat. Commun. 14, 3617)Where: abstract (arXiv abstract page) | |
| Superconducting | two-transmon device, CZUniversity of Science and Technology of China; Shanghai Research Center for Quantum Sciences | Two-qubit gate fidelity | 99.65% ±0.04 | Mean | Preprint Ye et al., arXiv:2109.05680Where: abstract (arXiv abstract page) | |
| Superconducting | Zuchongzhi 2.1 (66 qubits)University of Science and Technology of China | Readout fidelity | 97.74% | Mean | Preprint Zhu et al., arXiv:2109.03494Where: abstract | |
| Neutral atom | Atom Computing 87Sr registerAtom Computing | T1 (energy relaxation) | ≥ 5 s | Single device | Preprint Barnes et al., Assembly and coherent control of a register of nuclear spin qubits,…Where: Abstract | |
| Neutral atom | Atom Computing 87Sr registerAtom Computing | T2 echo | 42 s ±6 | Single device | Preprint Barnes et al., Assembly and coherent control of a register of nuclear spin qubits,…Where: Abstract | |
| Neutral atom | Atom Computing 87Sr registerAtom Computing | T2 Ramsey | 21 s ±7 | Single device | Preprint Barnes et al., Assembly and coherent control of a register of nuclear spin qubits,…Where: Abstract | |
| Semiconductor spin | 2-qubit Si/SiGe deviceRIKEN Center for Emergent Matter Science | Single-qubit gate fidelity | 99.8% | Single device | Preprint Noiri et al., arXiv:2108.02626 (Nature 601, 338)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit Si/SiGe deviceRIKEN Center for Emergent Matter Science | Two-qubit gate fidelity | 99.5% | Single device | Preprint Noiri et al., arXiv:2108.02626 (Nature 601, 338)Where: abstract (arXiv abstract page) | |
| Trapped ion | Honeywell QCCD system model H1Honeywell Quantum Solutions (now Quantinuum) | Two-qubit gate fidelity | error 0.003 ±0.0001 | Single device | Preprint Ryan-Anderson et al., arXiv:2107.07505Where: text: p11 of the arXiv PDF (physical-level error budget) | |
| Trapped ion | Quantinuum 10-qubit QCCD (H1 generation)Quantinuum | State preparation and measurement fidelity | 99.76% ±0.08 | Mean | Preprint Ryan-Anderson et al., Realization of real-time fault-tolerant quantum error correct…Where: Abstract | |
| Semiconductor spin | 2-qubit Si/SiGe processorQuTech, Delft University of Technology | Single-qubit gate fidelity | ≥ 99.5% | Single device | Preprint Xue et al., arXiv:2107.00628 (Nature 601, 343)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit Si/SiGe processorQuTech, Delft University of Technology | Two-qubit gate fidelity | 99.65% ±0.15 | Single device | Preprint Xue et al., arXiv:2107.00628 (Nature 601, 343)Where: text: p.4 and Fig. 4, Extended Data Figs. 4 and 5 | |
| Superconducting | Zuchongzhi 2.0 (66 qubits)University of Science and Technology of China | Single-qubit gate fidelity | 99.86% | Mean | Preprint Wu et al., arXiv:2106.14734Where: text: p.2 | |
| Superconducting | Zuchongzhi 2.0 (66 qubits)University of Science and Technology of China | Single-qubit gate fidelityPauli error | error 0.14% | Mean | Preprint Wu et al., arXiv:2106.14734Where: text: p.2 (Fig. 2a) | |
| Superconducting | Zuchongzhi 2.0 (66 qubits)University of Science and Technology of China | Two-qubit gate fidelity | 99.24% | Mean | Preprint Wu et al., arXiv:2106.14734Where: text: p.2 | |
| Superconducting | Zuchongzhi 2.0 (66 qubits)University of Science and Technology of China | Two-qubit gate fidelityPauli error | error 0.59% | Mean | Preprint Wu et al., arXiv:2106.14734Where: text: p.3 (Fig. 2c) | |
| Superconducting | Zuchongzhi 2.0 (66 qubits)University of Science and Technology of China | Readout fidelity | 95.23% | Mean | Preprint Wu et al., arXiv:2106.14734Where: text: p.2 | |
| Superconducting | Zuchongzhi 2.0 (66 qubits)University of Science and Technology of China | Readout fidelity | error 4.52% | Mean | Preprint Wu et al., arXiv:2106.14734Where: text: p.3 (Fig. 2b) | |
| Superconducting | Zuchongzhi 2.0 (66 qubits)University of Science and Technology of China | T1 (energy relaxation) | 30.6 µs | Mean | Preprint Wu et al., arXiv:2106.14734Where: text: p.2 and Fig. S3 | |
| Semiconductor spin | 2 donor nuclei + shared electron, 28SiUNSW Sydney | Single-qubit gate fidelity | 99.95% ±0.02 | Best | Preprint Madzik et al., arXiv:2106.03082 (Nature 601, 348)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2 donor nuclei + shared electron, 28SiUNSW Sydney | Two-qubit gate fidelity | 99.37% ±0.11 | Single device | Preprint Madzik et al., arXiv:2106.03082 (Nature 601, 348)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2 donor nuclei + shared electron, 28SiUNSW Sydney | State preparation and measurement fidelity | 98.95% ±0.04 | Single device | Preprint Madzik et al., arXiv:2106.03082 (Nature 601, 348)Where: abstract (arXiv abstract page) | |
| Superconducting | fixed-coupling transmons, crosstalk cancellationIBM; IBM Research - Thomas J. Watson Research Center | Two-qubit gate fidelity | error 0.19% ±0.02 | Single device | Preprint Wei et al., arXiv:2106.00675Where: abstract (arXiv abstract page) | |
| Superconducting | Ta-film transmon (dry-etched)Beijing Academy of Quantum Information Sciences | T1 (energy relaxation) | 503 µs | Best | Preprint Wang et al., arXiv:2105.09890Where: abstract | |
| Superconducting | transmon pair, SQiSW gateAlibaba Group | Two-qubit gate fidelity | 99.72% | Best | Preprint Huang et al., arXiv:2105.06074Where: abstract (arXiv abstract page) | |
| Superconducting | transmon pair, SQiSW gateAlibaba Group | Two-qubit gate fidelity | 99.31% | Mean | Preprint Huang et al., arXiv:2105.06074Where: abstract (arXiv abstract page) | |
| Trapped ion | GTRI cryogenic surface-electrode trapGeorgia Tech Research Institute | Bell-state fidelity | 99.94% ±0.03 | Single device | Preprint Clark et al., High-Fidelity Bell-State Preparation with ^{40}Ca^+ Optical Qubits, a…Where: Abstract | |
| Trapped ion | GTRI cryogenic surface-electrode trapGeorgia Tech Research Institute | Two-qubit gate time | 35 µs | Single device | Preprint Clark et al., High-Fidelity Bell-State Preparation with ^{40}Ca^+ Optical Qubits, a…Where: Abstract | |
| Superconducting | two-transmon tunable-coupling deviceLawrence Berkeley National Laboratory; University of California, Berkeley | Two-qubit gate fidelity | 99.43% | Single device | Preprint Mitchell et al., arXiv:2105.05384Where: abstract (arXiv abstract page) | |
| Superconducting | two transmons with tunable couplerRigetti Computing | Two-qubit gate fidelity | 99.3% | Best | Preprint Sete et al., arXiv:2104.03511Where: abstract (arXiv abstract page) | |
| Superconducting | fluxonium on sapphireUniversity of Maryland | T2 Ramsey | 1.48 ms ±0.13 | Single device | Preprint Somoroff et al., arXiv:2103.08578Where: abstract | |
| Defect spin | single NV, spin-to-charge conversion readoutUniversity of Science and Technology of China | Readout fidelity | ≥ 95% | Single device | Peer-reviewed High-fidelity single-shot readout of single electron spin in diamond with spin-to-c…Where: abstract (text as indexed in the OpenAlex record W3090660094) | |
| Superconducting | four-chip modular processorRigetti Computing | Two-qubit gate fidelity | 99.1% ±0.5 | Best | Preprint Gold et al., arXiv:2102.13293Where: abstract (arXiv abstract page) | |
| Superconducting | four-chip modular processorRigetti Computing | Two-qubit gate fidelity | 98.3% ±0.3 | Best | Preprint Gold et al., arXiv:2102.13293Where: abstract (arXiv abstract page) | |
| Superconducting | Sycamore 21-qubit repetition-code deviceGoogle Quantum AI | Two-qubit gate fidelityPauli error | error 0.62% | Median | Preprint Google Quantum AI, arXiv:2102.06132Where: text p.2 ("median Pauli error for the CZ gates is 0.62%") | |
| Semiconductor spin | 300 mm wafer quantum dots, 28Si/28SiO2Intel (with imec and Delft) | T1 (energy relaxation) | ≥ 1 s | Single device | Preprint Zwerver et al., arXiv:2101.12650 (Nat. Electron. 5, 184)Where: abstract (arXiv abstract page) | |
| Superconducting | fixed-frequency transmons with tunable busIBM Quantum | Two-qubit gate fidelity | 99.85% | Best | Preprint Stehlik et al., arXiv:2101.07746Where: abstract (maximum gate fidelity) | |
| Superconducting | 65-qubit laser-annealed processorIBM; IBM Research - Thomas J. Watson Research Center | Two-qubit gate fidelity | 98.7% | Median | Preprint Zhang et al., arXiv:2012.08475Where: abstract (arXiv abstract page) | |
| Semiconductor spin | planar Ge double quantum dotInstitute of Science and Technology Austria | T2 echo | ≥ 150 µs | Single device | Preprint Jirovec et al., arXiv:2011.13755 (Nat. Mater. 20, 1106)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | planar Ge double quantum dotInstitute of Science and Technology Austria | T2* (free induction) | 1 µs | Single device | Preprint Jirovec et al., arXiv:2011.13755 (Nat. Mater. 20, 1106)Where: abstract (arXiv abstract page) | |
| Superconducting | fixed-frequency transmons, ZZ suppressionIBM; IBM Research - Thomas J. Watson Research Center | Two-qubit gate fidelity | 99.77% ±0.02 | Single device | Preprint Kandala et al., arXiv:2011.07050Where: abstract (arXiv abstract page) | |
| Superconducting | two capacitively coupled fluxoniumsUniversity of Maryland | Two-qubit gate fidelity | error 0.008 ±0.001 | Single device | Preprint Ficheux et al., arXiv:2011.02634Where: abstract; text p.2 | |
| Superconducting | two capacitively coupled fluxoniumsUniversity of Maryland | Two-qubit gate time | 61.6 ns | Single device | Preprint Ficheux et al., arXiv:2011.02634Where: abstract | |
| Superconducting | two transmons with a tunable couplerMassachusetts Institute of Technology; MIT Lincoln Laboratory | Two-qubit gate fidelity | 99.76% ±0.07 | Single device | Preprint Sung et al., arXiv:2011.01261Where: text: p.4 and Fig. 4 (abstract also prints it) | |
| Superconducting | two transmons with a tunable couplerMassachusetts Institute of Technology; MIT Lincoln Laboratory | Two-qubit gate fidelity | 99.87% ±0.23 | Single device | Preprint Sung et al., arXiv:2011.01261Where: text: p.7 and Fig. 5 (abstract also prints it) | |
| Superconducting | IBM Falcon, six-qubit lineIBM Quantum | Single-qubit gate fidelity | error 0.00038 | Mean | Preprint Jurcevic et al., arXiv:2008.08571Where: text: p.2 | |
| Superconducting | IBM Falcon, six-qubit lineIBM Quantum | Two-qubit gate fidelity | error 0.0064 | Mean | Preprint Jurcevic et al., arXiv:2008.08571Where: text: p.2 | |
| Superconducting | IBM Falcon, six-qubit lineIBM Quantum | Readout fidelity | error 0.006 | Mean | Preprint Jurcevic et al., arXiv:2008.08571Where: text: p.2 | |
| Superconducting | IBM Falcon, six-qubit lineIBM Quantum | T1 (energy relaxation) | 113 µs | Mean | Preprint Jurcevic et al., arXiv:2008.08571Where: text: p.2 (Fig. 2b caption values) | |
| Superconducting | multi-transmon processor (SNZ CZ)QuTech, Delft University of Technology | Two-qubit gate fidelity | 99.93% ±0.24 | Single device | Preprint Negirneac et al., arXiv:2008.07411Where: abstract | |
| Defect spin | 4H-SiC single spinArgonne National Laboratory / University of Chicago | T2 echo | 64 ms | Single device | Peer-reviewed Miao et al., Science 369, 1493 (2020)Where: abstract (text as indexed in the OpenAlex record W3024773714) | |
| Defect spin | 4H-SiC single spinArgonne National Laboratory / University of Chicago | T2* (free induction) | ≥ 22 ms | Single device | Peer-reviewed Miao et al., Science 369, 1493 (2020)Where: abstract (text as indexed in the OpenAlex record W3024773714) | |
| Semiconductor spin | Si 2-qubit device above 1 KQuTech, Delft University of Technology / Intel | Two-qubit gate time | 67 ns | Single device | Preprint Petit et al., arXiv:2007.09034Where: abstract (arXiv abstract page) | |
| Superconducting | fixed-frequency transmons with tunable couplerSouthern University of Science and Technology | Two-qubit gate fidelity | 99.5% | Single device | Preprint Xu et al., arXiv:2006.11860Where: abstract | |
| Superconducting | fixed-frequency transmons with tunable couplerSouthern University of Science and Technology | Two-qubit gate time | 30 ns | Single device | Preprint Xu et al., arXiv:2006.11860Where: abstract | |
| Defect spin | NV centre spins in 4H-SiCUniversity of Science and Technology of China | T2 echo | 17.1 µs | Single device | Peer-reviewed Coherent control of nitrogen-vacancy center spins in silicon carbide at room temper…Where: abstract (text as indexed in the OpenAlex record W2975223887) | |
| Superconducting | two-transmon device, tunable ZZ couplingETH Zurich | Two-qubit gate fidelity | 97.9% | Single device | Preprint Collodo et al., arXiv:2005.08863Where: abstract (arXiv abstract page) | |
| Semiconductor spin | highly purified 28Si/SiGe deviceForschungszentrum Julich | T2 echo | 128 µs | Single device | Peer-reviewed Struck et al., npj Quantum Inf. 6, 40 (2020)Where: abstract (text as indexed in the OpenAlex record W2975540947) | |
| Semiconductor spin | highly purified 28Si/SiGe deviceForschungszentrum Julich | T2* (free induction) | 20 µs | Single device | Peer-reviewed Struck et al., npj Quantum Inf. 6, 40 (2020)Where: abstract (text as indexed in the OpenAlex record W2975540947) | |
| Superconducting | two-transmon device, parametric CZIBM Research - Zurich | Two-qubit gate fidelity | error 0.9% ±0.03 | Single device | Preprint Ganzhorn et al., arXiv:2005.05696Where: abstract (arXiv abstract page) | |
| Trapped ion | 43Ca+-88Sr+ mixed-species gateUniversity of Oxford | Two-qubit gate fidelity | 99.8% ±0.1 | Single device | Preprint Hughes et al., arXiv:2004.08162Where: abstract (arXiv abstract page) | |
| Semiconductor spin | resonantly driven ST qubitRIKEN Center for Emergent Matter Science | Single-qubit gate fidelity | 99.6% | Single device | Peer-reviewed Takeda et al., Phys. Rev. Lett. 124, 117701 (2020)Where: abstract (text as indexed in the OpenAlex record W2977975675) | |
| Semiconductor spin | resonantly driven ST qubitRIKEN Center for Emergent Matter Science | T2* (free induction) | ≥ 1 µs | Single device | Peer-reviewed Takeda et al., Phys. Rev. Lett. 124, 117701 (2020)Where: abstract (text as indexed in the OpenAlex record W2977975675) | |
| Trapped ion | Honeywell QCCD system (H0)Honeywell Quantum Solutions (now Quantinuum) | Single-qubit gate fidelity | 99.989% ±0.003 | Mean | Preprint Pino et al., Demonstration of the trapped-ion quantum-CCD computer architecture, ar…Where: Table I (p4) | |
| Trapped ion | Honeywell QCCD system (H0)Honeywell Quantum Solutions (now Quantinuum) | Two-qubit gate fidelity | 99.21% ±0.04 | Mean | Preprint Pino et al., Demonstration of the trapped-ion quantum-CCD computer architecture, ar…Where: Table I (p4) | |
| Trapped ion | Honeywell QCCD system (H0)Honeywell Quantum Solutions (now Quantinuum) | State preparation and measurement fidelity | 99.7% ±0.1 | Mean | Preprint Pino et al., Demonstration of the trapped-ion quantum-CCD computer architecture, ar…Where: Table I (p4) | |
| Trapped ion | Honeywell QCCD system (H0)Honeywell Quantum Solutions (now Quantinuum) | T2 echo | 2 s | Single device | Preprint Pino et al., Demonstration of the trapped-ion quantum-CCD computer architecture, ar…Where: Sec. on qubit and gate set (p3) | |
| Semiconductor spin | Si quantum dot QND readoutRIKEN CEMS / Tokyo Institute of Technology / UNSW | Readout fidelity | 95% | Best | Peer-reviewed Yoneda et al., Nat. Commun. 11, 1144 (2020)Where: abstract (text as indexed in the OpenAlex record W3009294641) | |
| Superconducting | Ta-on-sapphire transmon, best devicePrinceton University | T1 (energy relaxation) | 0.3 ms | Best | Preprint Place et al., arXiv:2003.00024Where: text: p.3 (Fig. 2B), best device, time-averaged | |
| Superconducting | Ta-on-sapphire transmonsPrinceton University | T1 (energy relaxation) | 0.23 ms | Mean | Preprint Place et al., arXiv:2003.00024Where: text: p.3, average across all devices | |
| Superconducting | Ta-on-sapphire transmon, best devicePrinceton University | T2 dynamical decoupling | 0.38 ms ±0.11 | Single device | Preprint Place et al., arXiv:2003.00024Where: text: p.3-4 (Fig. 2D), CPMG, best device | |
| Superconducting | Ta-on-sapphire transmon, best devicePrinceton University | T2 echo | 0.2 ms ±0.03 | Single device | Preprint Place et al., arXiv:2003.00024Where: text: p.3 (Fig. 2C), best device | |
| Superconducting | heavy fluxoniumUniversity of Chicago | Single-qubit gate fidelity | 99.8% | Single device | Preprint Zhang et al., arXiv:2002.10653Where: abstract | |
| Superconducting | gmon qubit pairs (fSim gate set)Google AI Quantum | Two-qubit gate fidelityPauli error | error 0.0038 | Mean | Preprint Foxen et al., arXiv:2001.08343Where: abstract | |
| Neutral atom | Caltech 88Sr Rydberg tweezer arrayCaltech | Bell-state fidelity | ≥ 99.1% ±0.4 | Mean | Preprint Madjarov et al., High-Fidelity Entanglement and Detection of Alkaline-Earth Rydberg…Where: p2 table and text | |
| Neutral atom | Caltech 88Sr Rydberg tweezer arrayCaltech | Bell-state fidelity | ≥ 98% ±0.3 | Mean | Preprint Madjarov et al., High-Fidelity Entanglement and Detection of Alkaline-Earth Rydberg…Where: p2 table and text | |
| Superconducting | two-transmon pair, XY gate familyRigetti Computing | Two-qubit gate fidelity | 97.35% ±0.17 | Median | Preprint Abrams et al., arXiv:1912.04424Where: abstract (arXiv abstract page) | |
| Superconducting | two-transmon pair, XY gate familyRigetti Computing | Two-qubit gate fidelity | 99.01% ±0.15 | Best | Preprint Abrams et al., arXiv:1912.04424Where: abstract (arXiv abstract page) | |
| Semiconductor spin | single-spin qubit in enriched 28SiCQC2T, UNSW Sydney / Aalto University | T2* (free induction) | 1.4 µs | Single device | Peer-reviewed Zhao et al., Nat. Commun. 10, 5500 (2019)Where: abstract (text as indexed in the OpenAlex record W2992784851) | |
| Semiconductor spin | 2-qubit Si/SiGe device (QND readout)QuTech, Delft University of Technology | Readout fidelity | 94.5% ±0.2 | Single device | Preprint Xue et al., arXiv:1911.08420 (Phys. Rev. X 10, 021006)Where: abstract (arXiv abstract page) | |
| Trapped ion | two-ion symmetric-subspace benchmarkingHoneywell Quantum Solutions (now Quantinuum) | Two-qubit gate fidelity | error 0.002 ±0.001 | Single device | Preprint Baldwin et al., arXiv:1911.00085Where: abstract (arXiv abstract page) | |
| Superconducting | Sycamore (53 qubits used)Google AI Quantum | Single-qubit gate fidelityPauli error | error 0.16% ±0.05 | Mean | Preprint Google AI Quantum, arXiv:1910.11333 (Supplementary information of Nature 574, 505)Where: Supplement Table II (p.22), 1Q XEB e1 simultaneous | |
| Superconducting | Sycamore (53 qubits used)Google AI Quantum | Single-qubit gate fidelityPauli error | error 0.14% | Median | Preprint Google AI Quantum, arXiv:1910.11333 (Supplementary information of Nature 574, 505)Where: Supplement Table II (p.22), 1Q XEB e1 simultaneous | |
| Superconducting | Sycamore (53 qubits used)Google AI Quantum | Two-qubit gate fidelityPauli error | error 0.36% ±0.17 | Mean | Preprint Google AI Quantum, arXiv:1910.11333 (Supplementary information of Nature 574, 505)Where: Supplement Table II (p.22), 2Q XEB e2 isolated | |
| Superconducting | Sycamore (53 qubits used)Google AI Quantum | Two-qubit gate fidelityPauli error | error 0.62% ±0.24 | Mean | Preprint Google AI Quantum, arXiv:1910.11333 (Supplementary information of Nature 574, 505)Where: Supplement Table II (p.22), 2Q XEB e2 simultaneous | |
| Superconducting | Sycamore (53 qubits used)Google AI Quantum | Two-qubit gate fidelityPauli error | error 0.6% | Median | Preprint Google AI Quantum, arXiv:1910.11333 (Supplementary information of Nature 574, 505)Where: Supplement Table II (p.22), 2Q XEB e2 simultaneous | |
| Superconducting | Sycamore (53 qubits used)Google AI Quantum | Readout fidelity | error 3.77% ±1.61 | Mean | Preprint Google AI Quantum, arXiv:1910.11333 (Supplementary information of Nature 574, 505)Where: Supplement Table II (p.22), measurement error em simultaneous | |
| Superconducting | Sycamore (53 qubits used)Google AI Quantum | T1 (energy relaxation) | 16.04 µs ±4 | Mean | Preprint Google AI Quantum, arXiv:1910.11333 (Supplementary information of Nature 574, 505)Where: Supplement Table II (p.22) | |
| Superconducting | Sycamore (53 qubits used)Google AI Quantum | T1 (energy relaxation) | 15.54 µs | Median | Preprint Google AI Quantum, arXiv:1910.11333 (Supplementary information of Nature 574, 505)Where: Supplement Table II (p.22) | |
| Defect spin | single NV in 12C-enriched diamondKyoto University / AIST | T2 echo | 2.4 ms | Single device | Peer-reviewed Herbschleb et al., Nat. Commun. 10, 3766 (2019)Where: abstract (text as indexed in the OpenAlex record W2970744406) | |
| Defect spin | single NV in 12C-enriched diamondKyoto University / AIST | T2* (free induction) | 1.5 ms | Single device | Peer-reviewed Herbschleb et al., Nat. Commun. 10, 3766 (2019)Where: abstract (text as indexed in the OpenAlex record W2970744406) | |
| Neutral atom | Harvard five-pair parallel Rydberg experimentHarvard University | Two-qubit gate fidelity | ≥ 97.4% ±0.3 | Mean | Preprint Levine et al., Parallel implementation of high-fidelity multi-qubit gates with neut…Where: Abstract | |
| Superconducting | Kerr-cat nonlinear resonator (Fock qubit)Yale University | T1 (energy relaxation) | 15.5 µs | Single device | Preprint Grimm et al., arXiv:1907.12131Where: text p.2 and parameter table p.16 | |
| Superconducting | Kerr-cat nonlinear resonator (Fock qubit)Yale University | T2 echo | 13.7 µs | Single device | Preprint Grimm et al., arXiv:1907.12131Where: parameter table p.16 | |
| Superconducting | Kerr-cat nonlinear resonator (Fock qubit)Yale University | T2 Ramsey | 3.4 µs | Single device | Preprint Grimm et al., arXiv:1907.12131Where: parameter table p.16 | |
| Trapped ion | 17-ion 171Yb+ chainJoint Center for Quantum Information and Computer Science; Joint Quantum Institute | Two-qubit gate fidelity | 97% ±1 | Best | Preprint Landsman et al., arXiv:1905.10421Where: abstract (arXiv abstract page) | |
| Semiconductor spin | Ge/SiGe planar 2-qubit deviceQuTech, Delft University of Technology | Single-qubit gate fidelity | 99.3% | Single device | Preprint Hendrickx et al., arXiv:1904.11443 (Nature 577, 487)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | Ge/SiGe planar 2-qubit deviceQuTech, Delft University of Technology | Two-qubit gate time | 75 ns | Single device | Preprint Hendrickx et al., arXiv:1904.11443 (Nature 577, 487)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | Si/SiGe two-qubit deviceQuTech, Delft University of Technology | Two-qubit gate fidelity | 92% | Single device | Peer-reviewed Xue et al., Phys. Rev. X 9, 021011 (2019)Where: abstract (text as indexed in the OpenAlex record W2899729961) | |
| Trapped ion | IonQ 11-qubit system (13 ions)IonQ, University of Maryland, Duke University | Single-qubit gate fidelity | 99.5% | Mean | Preprint Wright et al., Benchmarking an 11-qubit quantum computer, arXiv:1903.08181Where: Abstract | |
| Trapped ion | IonQ 11-qubit system (13 ions)IonQ, University of Maryland, Duke University | Two-qubit gate fidelity | 97.5% | Mean | Preprint Wright et al., Benchmarking an 11-qubit quantum computer, arXiv:1903.08181Where: Abstract | |
| Trapped ion | IonQ 11-qubit system (13 ions)IonQ, University of Maryland, Duke University | State preparation and measurement fidelity | 99.3% | Mean | Preprint Wright et al., Benchmarking an 11-qubit quantum computer, arXiv:1903.08181Where: Abstract | |
| Superconducting | two-transmon processor, flux-pulsed CZQuTech; Delft University of Technology | Two-qubit gate fidelity | 99.1% | Single device | Preprint Rol et al., arXiv:1903.02492Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit unit cell, 28SiUNSW Sydney | Single-qubit gate fidelity | 98.6% | Single device | Preprint Yang et al., arXiv:1902.09126 (Nature 580, 350)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit unit cell, 28SiUNSW Sydney | T2* (free induction) | 2 µs | Single device | Preprint Yang et al., arXiv:1902.09126 (Nature 580, 350)Where: abstract (arXiv abstract page) | |
| Trapped ion | Innsbruck ion-trap quantum computer (up to 10 qubits)University of Innsbruck | Two-qubit gate fidelity | 99.6% ±0.1 | Single device | Preprint Erhard et al., Characterizing large-scale quantum computers via cycle benchmarking,…Where: Abstract | |
| Trapped ion | PTB/Hannover microwave near-field trapPTB Braunschweig, Leibniz Universitat Hannover | Two-qubit gate fidelity | 98.2% ±1.2 | Single device | Preprint Hahn et al., Integrated ^{9}Be^{+} multi-qubit gate device for the ion-trap quantum…Where: Abstract | |
| Superconducting | two-transmon device with parametric entangling gateRigetti Computing | Two-qubit gate fidelity | 99.2% ±0.15 | Best | Preprint Hong et al., arXiv:1901.08035Where: abstract (arXiv abstract page) | |
| Semiconductor spin | donor quantum dots in SiCQC2T, UNSW Sydney | Readout fidelity | 82.9% | Mean | Peer-reviewed Keith et al., Phys. Rev. X 8, 041032 (2018)Where: abstract (text as indexed in the OpenAlex record W2890936036) | |
| Superconducting | two-transmon tunable-coupler circuitPrinceton University | Two-qubit gate fidelity | 94.8% | Single device | Preprint Mundada et al., arXiv:1810.04182Where: abstract (arXiv abstract page) | |
| Semiconductor spin | Ge hut-wire hole qubitInstitute of Science and Technology Austria / Johannes Kepler University Linz | T2* (free induction) | 0.13 µs | Single device | Peer-reviewed Watzinger et al., Nat. Commun. 9, 3902 (2018)Where: abstract (text as indexed in the OpenAlex record W2891060065) | |
| Defect spin | NV with carbon-13 spin environmentQuTech, Delft University of Technology / Element Six | T2 dynamical decoupling | ≥ 1 s | Single device | Peer-reviewed Abobeih et al., Nat. Commun. 9, 2552 (2018)Where: abstract (text as indexed in the OpenAlex record W2781890679) | |
| Semiconductor spin | Si/SiGe quantum dotSandia National Laboratories / Institut quantique, Universite de Sherbrooke | Readout fidelity | ≥ 99.86% | Single device | Peer-reviewed Harvey-Collard et al., Phys. Rev. X 8, 021046 (2018)Where: abstract (text as indexed in the OpenAlex record W2607225345) | |
| Semiconductor spin | 2-qubit SiMOS device 28SiUNSW Sydney | Two-qubit gate fidelity | 94.7% | Single device | Preprint Huang et al., arXiv:1805.05027 (Nature 569, 532)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit SiMOS device 28SiUNSW Sydney | Two-qubit gate fidelity | 98% | Single device | Preprint Huang et al., arXiv:1805.05027 (Nature 569, 532)Where: abstract (arXiv abstract page) | |
| Defect spin | single SiV- centreHarvard University / Universitat Ulm | Readout fidelity | 89% | Single device | Peer-reviewed Sukachev et al., Phys. Rev. Lett. 119, 223602 (2017)Where: abstract (text as indexed in the OpenAlex record W2769928943) | |
| Defect spin | single SiV- centreHarvard University / Universitat Ulm | T1 (energy relaxation) | ≥ 1 s | Single device | Peer-reviewed Sukachev et al., Phys. Rev. Lett. 119, 223602 (2017)Where: abstract (text as indexed in the OpenAlex record W2769928943) | |
| Trapped ion | fast two-qubit gate in a trapped-ion pairUniversity of Oxford | Two-qubit gate fidelity | 99.8% | Single device | Preprint Schäfer et al., arXiv:1709.06952Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit Si/SiGe device (CNOT)Princeton University | Single-qubit gate fidelity | ≥ 99% | Single device | Preprint Zajac et al., arXiv:1708.03530 (Science 359, 439)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | 2-qubit Si/SiGe device (CNOT)Princeton University | Two-qubit gate time | 200 ns | Single device | Preprint Zajac et al., arXiv:1708.03530 (Science 359, 439)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | isotopically enriched Si/SiGe single qubitRIKEN / University of Tokyo | Single-qubit gate fidelity | ≥ 99.9% | Mean | Preprint Yoneda et al., arXiv:1708.01454 (Nat. Nanotechnol. 13, 102)Where: abstract (arXiv abstract page) | |
| Semiconductor spin | isotopically enriched Si/SiGe single qubitRIKEN / University of Tokyo | T2* (free induction) | 20 µs | Single device | Preprint Yoneda et al., arXiv:1708.01454 (Nat. Nanotechnol. 13, 102)Where: abstract (arXiv abstract page) | |
| Superconducting | four-qubit linear array (parametric gates)Rigetti Computing | Two-qubit gate fidelity | 93% | Mean | Preprint Reagor et al., arXiv:1706.06570Where: abstract ("average process fidelity of F = 93% ... three two-qubit gates") | |
| Superconducting | transmon pair with parametric iSWAPRigetti Computing | Two-qubit gate fidelity | error 6% | Single device | Preprint Caldwell et al., arXiv:1706.06562Where: abstract (arXiv abstract page) | |
| Superconducting | transmon pair with parametric CZRigetti Computing | Two-qubit gate fidelity | error 9% | Single device | Preprint Caldwell et al., arXiv:1706.06562Where: abstract (arXiv abstract page) | |
| Defect spin | single SiV- centreUniversity of Cambridge / Saarland University / Element Six | T2* (free induction) | 0.115 µs ±0.009 | Single device | Peer-reviewed Coherent control of the silicon-vacancy spin in diamond, Nat. Commun. 8, 15579 (201…Where: abstract (text as indexed in the OpenAlex record W2582552126) | |
| Defect spin | weakly coupled 13C nuclear spinBeijing Computational Science Research Center / Chinese University of Hong Kong | Readout fidelity | 95.5% | Single device | Peer-reviewed Single-shot readout of a nuclear spin weakly coupled to a nitrogen-vacancy center a…Where: abstract (text as indexed in the OpenAlex record W2564881160) | |
| Semiconductor spin | GaAs double-quantum-dot qubitsHarvard University | Single-qubit gate fidelity | 99% | Single device | Peer-reviewed Nichol et al., npj Quantum Inf. 3, 3 (2017)Where: abstract (text as indexed in the OpenAlex record W2518047199) | |
| Semiconductor spin | GaAs double-quantum-dot qubitsHarvard University | Two-qubit gate fidelity | 90% | Single device | Peer-reviewed Nichol et al., npj Quantum Inf. 3, 3 (2017)Where: abstract (text as indexed in the OpenAlex record W2518047199) | |
| Trapped ion | Tsinghua Yb+/Ba+ sympathetic-cooling trapTsinghua University | T2 echo | ≥ 600 s | Single device | Preprint Wang et al., Single-qubit quantum memory exceeding 10-minute coherence time, arXiv:…Where: Abstract; Sec. 1 | |
| Semiconductor spin | Si/SiGe single-qubit deviceQuTech, Delft University of Technology | Single-qubit gate fidelity | 99% | Single device | Peer-reviewed Kawakami et al., PNAS 113, 11738 (2016)Where: abstract (text as indexed in the OpenAlex record W2278413838) | |
| Defect spin | divacancy ensemble, natural isotopic 4H-SiCArgonne National Laboratory / University of Chicago | T2 echo | 1.3 ms | Best | Peer-reviewed Seo et al., Nat. Commun. 7, 12935 (2016)Where: abstract (text as indexed in the OpenAlex record W2410085339) | |
| Trapped ion | microfabricated surface trap, near-field microwave gateUniversity of Oxford | Two-qubit gate fidelity | 99.7% ±0.1 | Single device | Preprint Harty et al., arXiv:1606.08409Where: abstract (arXiv abstract page) | |
| Trapped ion | NIST 9Be+ laser-gate systemNIST Boulder | Single-qubit gate fidelity | 99.9962% ±0.0001 | Single device | Preprint Gaebler et al., High-Fidelity Universal Gate Set for ^9Be^+ Ion Qubits, arXiv:1604.…Where: Abstract | |
| Trapped ion | NIST 9Be+ laser-gate systemNIST Boulder | Two-qubit gate fidelity | 99.92% ±0.04 | Single device | Preprint Gaebler et al., High-Fidelity Universal Gate Set for ^9Be^+ Ion Qubits, arXiv:1604.…Where: Abstract | |
| Trapped ion | JQI/UMD five-qubit programmable computerUniversity of Maryland (JQI) | Two-qubit gate fidelity | 98% | Mean | Preprint Debnath et al., Demonstration of a small programmable quantum computer with atomic…Where: Abstract | |
| Superconducting | fixed-frequency transmon pair (cross resonance)IBM T.J. Watson Research Center | Two-qubit gate fidelity | 0.991 ±0.002 | Single device | Preprint Sheldon et al., arXiv:1603.04821Where: text p.2 ("CR gate fidelity f = 0.991 +/- 0.002 for a 160 ns gate") | |
| Superconducting | fixed-frequency transmon pair (cross resonance)IBM T.J. Watson Research Center | Two-qubit gate time | 160 ns | Single device | Preprint Sheldon et al., arXiv:1603.04821Where: text p.2 | |
| Trapped ion | Sussex microwave-gate trapUniversity of Sussex | Bell-state fidelity | 98.5% ±1.2 | Single device | Preprint Weidt et al., Trapped-ion quantum logic with global radiation fields, arXiv:1603.03…Where: Abstract | |
| Semiconductor spin | natural-Si double dotRIKEN Center for Emergent Matter Science | Single-qubit gate fidelity | 99.6% | Single device | Preprint Takeda et al., arXiv:1602.07833 (Sci. Adv. 2, e1600694)Where: abstract (arXiv abstract page) | |
| Superconducting | cavity memory with transmon ancillaYale University | T1 (energy relaxation) | 250 µs | Single device | Preprint Ofek et al., arXiv:1602.04768Where: text p.2, resonator single-photon Fock relaxation time (approximate as printed) | |
| Superconducting | ancilla transmonYale University | T1 (energy relaxation) | 35 µs | Single device | Preprint Ofek et al., arXiv:1602.04768Where: text p.2, ancilla transmon (approximate as printed) | |
| Trapped ion | two 43Ca+ ions in a room-temperature trapUniversity of Oxford | Two-qubit gate fidelity | 99.9% ±0.1 | Single device | Preprint Ballance et al., arXiv:1512.04600 (Phys. Rev. Lett. 117, 060504)Where: abstract and text: p.1 |
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The full ledger as one file per format, 357 rows, release 2026-11-09. The compilation is licensed CC BY 4.0: cite it and keep each row’s source.
Release 2026-11-09 · CC BY 4.0
Cite this dataset
ScienceShot. Qubit performance ledger, release 2026-11-09. https://scienceshot.com/qubit-performance-ledger.
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ScienceShot. (2026). Qubit performance ledger, release 2026-11-09 [Dataset]. https://scienceshot.com/qubit-performance-ledger
@misc{scienceshot-qubit-performance-ledger-2026,
author = {{ScienceShot}},
title = {{Qubit performance ledger, release 2026-11-09}},
year = {2026},
note = {Dataset},
url = {https://scienceshot.com/qubit-performance-ledger}
}Reviewed by a physicist with CERN experience